STMicroelectronics MOSFET Distributor | STPOWER N-Channel
Genuine STMicroelectronics STPOWER N-channel MOSFETs with low on-resistance for power conversion and motor drive.
STPOWER MOSFETs Overview
BeiLuo supplies genuine STMicroelectronics STPOWER MOSFETs, the N-channel silicon devices that switch power in motor drives, power supplies, inverters and DC-DC converters. The portfolio is built on ST's STripFET and MDmesh technologies, which trade off on-resistance, gate charge and ruggedness to suit different switching frequencies and topologies. STripFET devices use a trench gate structure for low on-resistance at moderate voltages, which suits low-voltage, high-current applications such as battery-powered motor drives and DC-DC stages. MDmesh devices use a super-junction structure for low on-resistance at high voltage, which suits offline power supplies and other high-voltage switching. Choosing a MOSFET is a balance among breakdown voltage, current rating, on-resistance, gate charge and thermal package, and the right part depends on the switching frequency and the loss budget of the design. Low on-resistance reduces conduction loss, while low gate charge reduces switching loss, and the two usually trade against each other. ST also offers SiC MOSFETs for the highest-voltage, highest-efficiency designs. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Our FAE team helps you match the MOSFET to your topology, gate drive and thermal design, balancing on-resistance, gate charge and package against the switching frequency and the thermal path of the design.
STPOWER MOSFETs Product Range
In-stock Power MOSFET series available now, each with import documentation and FAE support. Click a model for full specifications and purchase information.
| Model | Type | Vds | Id | Rds(on) | Package |
|---|---|---|---|---|---|
| STP110N8F6 | N-channel STripFET F6 | 80 V | 110 A | 5.6 mOhm | TO-220 |
| STP60NF06 | N-channel STripFET | 60 V | 60 A | 14 mOhm | TO-220 |
Frequently Asked Questions
How do I balance on-resistance and gate charge?
On-resistance drives conduction loss, which dominates at low switching frequency, while gate charge drives switching loss, which dominates at high frequency. Balance the two against the switching frequency and the loss budget.
Low-voltage STripFET parts favor low resistance; high-voltage MDmesh parts favor a balance for offline supplies.
When should I consider a SiC MOSFET?
Consider silicon carbide for the highest bus voltages and the highest efficiency targets, where its low switching loss and high-temperature operation justify the cost.
For most low and medium-voltage designs, silicon STPOWER MOSFETs remain the practical choice.
What thermal design does a MOSFET need?
The package must carry the dissipated heat to the board or heatsink, so the thermal path and the copper area matter as much as the electrical ratings.
Our FAE team reviews the thermal design during design-in.
Documentation
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Request pricing, samples or technical consultation for STPOWER MOSFETs products. Our FAE team responds within one business day.
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